PART |
Description |
Maker |
IXFH32N50Q IXFT32N50Q |
32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET?/a> Power MOSFETs Q-Class HiPerFET⑩ Power MOSFETs Q-Class Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS Corporation
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IXFH80N20Q IXFK80N20Q IXFT80N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS TRANSISTOR|MOSFET|N-CHANNEL|200VV(BR)DSS|80AI(D)|TO-247AD
HiPerFET Power MOSFETs Q-Class
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IXYS[IXYS Corporation]
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HUF75307D3 HUF75307D3S HUF75307P3 HUF75307D3ST HUF |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 15A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 15A条(丁)|52AA 15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 15A, 55V, 0.099 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc MOTOROLA
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IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET) Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
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MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
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UF630L-TF3-T UF630 UF630L-TA3-T UF630-TA3-T UF630- |
9A, 200V, 0.4?/a> , N-CHANNEL POWER MOSFETS 9A, 200V, 0.4 , N-CHANNEL POWER MOSFETS 9A, 200V, 0.4з , N-CHANNEL POWER MOSFETS 9A条,00V.4з的N通道功率MOSFET
|
UTC[Unisonic Technologies] 友顺科技股份有限公司 Unisonic Technologies Co., Ltd.
|
IXFN180N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电0mΩ的N沟道增强型HiPerFET功率MOSFET) HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA From old datasheet system 3.1A 400V 1.800 Ohm N-Channel Power MOSFETs 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs 0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation] HARRIS SEMICONDUCTOR
|
IXTH28N50Q IXTT28N50Q |
Discrete MOSFETs: Standard N-channel Types Power MOSFETs Q-Class
|
International Rectifier IXYS Corporation
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